Optical Engineering: On response time of semiconductor photodiodes
Abstract
The effect of displacement currents due to dielectric relaxation of majority carriers in the charge-neutral
region of a semiconductor photodiode is discussed. The dielectric relaxation is often neglected when treating
the response time of photodiodes. We show that this component may dominate the slow response of not fully
depleted photodiodes and has to be taken into account for correct analysis of silicon photodiode response to
a brief laser pulse. A phenomenological expression for the photodiode response time that accounts for the displacement
current effects is proposed and used to compare with the experimental results. © The Authors. Published by
SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of
the original publication, including its DOI. [DOI: 10.1117/1.OE.56.9.097101]
Citation
Alexander O. Goushcha, Bernd Tabbert, “On response time of semiconductor photodiodes,†Opt. Eng. 56(9), 097101 (2017), doi: 10.1117/1.OE.56.9.097101.
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