Microfabrication
API processes silicon (Si) and III-V (InGaAs and InP) material substrates to produce a broad selection of high-performance and high-speed photodiodes. We utilize wafer fabricating capabilities in all three of our facilities.
API's fully equipped silicon-wafer fabricating facility is located in Michigan and supports custom detector development from initial prototypes to high-volume manufacturing.
Our team has over twenty years of experience in the design and fabrication of both Si and III-V materials to ensure the highest performing detector for your application.